copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 1 /7 SW70N10V n - channel enhanced mode to - 251/to - 252/to - 220 mosfet absolute maximum ratings symbol parameter value unit to - 251 to - 252 to - 220 v dss drain to source voltage 95 v i d continuous drain current (@t c =25 o c) 70* a continuous drain current (@t c =100 o c) 44* a i dm drain current pulsed (note 1) 280 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 351 mj e ar repetitive avalanche energy (note 1) 24 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 69.4 125 179 w derating factor above 25 o c 0.55 1.00 1.4 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 251 to - 252 to - 220 r thjc thermal resistance, junction to case 1.8 1.0 0.7 o c/w r thja thermal resistance, junction to ambient 92 56 o c /w *. drain current is limited by junction temperature. bv dss : 95v i d : 70a r ds(on) : 11.7 m ? @v gs =10v 12.4 m ? @v gs =4.5v 1. gate 2. drain 3. source to - 251 1 2 3 order codes item sales type marking package packaging 1 sw i 70n10v SW70N10V to - 251 tube 2 sw d 70n10v SW70N10V to - 252 reel 3 sw p 70n10v SW70N10V to - 220 tube 1 2 3 features ? high ruggedness ? low r ds( on ) (t yp 11.7 m ? )@v gs =10v low r ds( on ) (t yp 12.4 m ? )@v gs =4.5v ? low gate charge ( typ 117nc) ? improved dv/dt capability ? 100% avalanche tested ? application:synchronous rectification, li battery protect board, inverter general description this power mosfet is produced with advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 1 2 3 to - 252 to - 220 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 2 /7 SW70N10V electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 95 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.1 v/ o c i dss drain to source leakage current v ds =95v, v gs =0v 1 ua v ds =76v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 20v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 3 v r ds(on) drain to source on state resistance v gs =10v, i d =30a 11.7 13 m ? v gs =4.5v, i d =30a 12.4 14 m ? g fs forward transconductance v ds =10v, i d =35a 119 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 8110 pf c oss output capacitance 315 c rss reverse transfer capacitance 314 t d(on) turn on delay time v ds =50v, i d =70a, r g =25?, v gs =10v (note 4,5) 21 ns t r rising time 87 t d(off) turn off delay time 403 t f fall time 156 q g total gate charge v ds =80v, v gs =10v, i d =70a (note 4,5) 117 nc q gs gate - source charge 9.5 q gd gate - drain charge 43 r g gate resistance v ds =0v, scan f mode 1.14 ? source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 70 a i sm pulsed source current 280 a v sd diode forward voltage drop. i s =70a, v gs =0v 1.4 v t rr reverse recovery time i s =70a, v gs =0v, di f /dt=100a/us 36 ns q rr reverse recovery c harge 56 n c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l =1.76mh, i as =20a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 70a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 3 /7 SW70N10V fig. 1. on - state characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 4. on state current vs. diode forward voltage fig 5. breakdown v oltage v ariation vs. j unction t emperature fig. 6. on resistance variation vs. junction temperature fig. 2. t ransfer characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 4 /7 SW70N10V fig. 8. c apacitance characteristics fig. 9 . maximum safe operating area(to - 251) fig. 10 . maximum safe operating area(to - 252) fig. 7 gate charge characteristics fig. 11 . maximum safe operating area(to - 220)
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 5 /7 SW70N10V fig. 13. transient thermal response curve(to - 252) fig. 12. transient thermal response curve(to - 251) fig. 14. transient thermal response curve(to - 220)
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 6 /7 SW70N10V fig. 17 . unclamped inductive switching test circuit & waveform v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 16 . switching time test circuit & waveform fig. 15. gate charge test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 7 /7 SW70N10V disclaimer * all the data & curve in this document was tested in xian semipower testing & application cente r. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com fig. 18 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs ( driver ) i s ( dut ) v ds ( dut ) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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